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nucleation; (b) Without bias nucleation Fig.2 3D image of diamond film taken by AFM(scan size of 10 mm?10 mm) Fig.3 XRD pattern of diamond film deposited by HFCVD using positive bias nucleation... Characterization of (100)-orientated diamond film grown by HFCVD method with a positive DC bias voltage MA Ying(马 莹)1, WANG Lin-jun(王林军)1, LIU Jian-min(刘建敏)1, SU Qing-feng(苏青峰)1, XU Run(徐......
and SEM results show that grain size decreases and non-diamond impurities increase for applying grid and substrate bias currents. The defects and impurities in the film increase with the decrease of grain size, which causes the decrease of hardness and elastic modulus of diamond films. The fracture toughness of film increases because of the grain size effects by applying bias. The grid bias......
to 500 °C.The exchange bias field can be tuned by the annealing temperature for the heterostructures, and the electric domain size can be controlled by the crystal grain size. A large exchange bias...Exchange bias on polycrystalline BiFeO3/Co2Fe(Al0.5Si0.5) heterostructuresShi-Zhe Wu,Yong Wu,Shao-Qian Yin,Xiao-Guang Xu,Jun Miao,Yong JiangSchool of Materials Science and Engineering, University......
of Ti films deposited at bias voltage of 0 (a) and 100 V (b) Fig. 6 Dependence of grain size on bias voltage 3.4 Hardness The hardness was measured by indentation tests. In order to minimize..., grain size, and surface morphology of Ti films, as shown from XRD, SEM and TEM analysis. The bias voltage is related to the ion energy [26], expressed by E∝Vb/P1/2, where E, Vb and P are the ion energy......
: 482-486. [18] ESPINOZA-BELTRAN F J, CHE-SOBERANIS O, GARCIA-GONZALEZ L, MORALES-HERNANDEZ J. Effect of the substrate bias potential on crystalline grain size, intrinsic stress and hardness of vacuum...降低. 关键词:TaN薄膜;负偏压;微观结构;摩擦性能 中图分类号:TG174.44;TG148 文献标志码:A Effect of bias voltage on microstructure......
are shown in Fig.5. It can be seen that the increasing negative bias improves the bombardment effect. The number and size of the droplets decrease with increasing pulse bias voltage. The coatings.... The influence of AlN content on the phase change was studied by synthesizing Cr1-xAlxN coatings with different x values. The effects of substrate negative bias on the surface morphology, deposition......
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cathodic arc plasma (FCAP) technique. AFM, XRD, TEM were employed to characterize the TiN thin films. The effects of the negative substrate bias on the grain size, preferred crystalline orientation, surface...THE EFFECTS OF NEGATIVE BIAS AND FLUX RATIO ON THE PROPERTIES OF TiN THIN FILMS FORMED BY FILTERED CATHODIC ARC PLASMA TECHNIQUE J.Wang1,W.W. Zhang1,Z.G. Wu1,Q.J. Xue2,Y.J.Zhang1,P.X. Yan1......
Determining simulation sample size for given precision requirements SHI Peng(时蓬), YANG Ming(杨明) (Control and Simulation Centre, Harbin Institute of Technology, Harbin 150080, China) Abstract.... Some empirical experiments illustrate the validity of the proposed method. Key words: simulation sample size; transient performance measures; steady-state performance measures; required precision......
THE EFFECTS OF PULSE BIAS VOLTAGE AND N2 PARTIAL PRESSURE ON TiAIN FILMS OF ARC ION PLATING (AIP) C.Sun1,M.S.Li1,S.L.Zhu1,L.S.Wen1,Fuhui WANG1 (1.Institute of Metal Research, The Chinese Academy... parameters such ascompositions of target materials, N2 partial pressure, substrate bias and so on. ln thisstudy, several titanium aluminum nitride films were deposited on 1Cr11Ni2 W2Mo Vsteel......